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We investigate recombination in
hydrogenated amorphous silicon, and other related silicon morphologies
with pulsed electrically and optically detected magnetic resonance
which gives microscopic information about the type of defects involved
in the recombination. We collaborate on these questions with Klaus
Lips from Helmholtz-Zentrum Berlin fur Materialien und Energie
(formerly Hahn- Meitner-Institut). P. C.
Taylor from the Colorado Energy Research Institute, and A.
Madan from M. V. Systems. |
 Sketch
of the band diagram of hydrogenated amorphous silicon. There is a wide
range of defect in this disordered materials can cause recombination of
excess charge carriers.
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 Plot of the charges detected after a
coherent spin excitation as a function of the excitation length and the
applied magnetic field. At about 347.5mT, an oscillation is visible
representing the coherent nutation of spins which control charge
carrier recombination.
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Our recent results on this topic: C. Boehme*, J. Behrends, K. v. Maydell, M. Schmidt and K. Lips, Investigation of hopping transport in n-a-Si:H/c-Si solar cells with pulsed electrically detected magnetic resonance J. Non-Cryst. Solids, 352, 1113 (2006). Christoph Boehme*, Klaus Lips, The investigation of charge carrier recombination and hopping transport with pulsed electrically detected magnetic resonance techniques published as book article in the book: "Charge transport in disordered solids with applications in electronics", Wiley Publisher, ISBN: 0-470-09504-0, edited by Sergei Baranovski (2006). http://www.wiley.com/WileyCDA/WileyTitle/productCd-0470095040.html |
