OptoElectronic Materials Laboratory

Location: JFB 326-333
Director: Matthew C. DeLong
Assistant: Wayne L. Wingert

services available from the Optoelectronic materials laboratory 2007

Scanning Electron Microscopy

Imaging with paper or electronic output; backscatter and SE detectors; 10 nm resolution
Elemental analysis via EDX, size limit about 2 cubic microns; detection limit about 0.5%; all elements down to carbon in atomic weight
Electron beam lithography; feature sizes less than 100 nm

Thin film deposition

dc and rf sputtering, thermal evaporation and e-gun
Metals, organics and inorganics
Custom sputtering targets

Thermal annealing

Vacuum, inert and reactive atmospheres

Single crystal growth

Czochralski and Bridgman melt growth, physical vapor deposition
Organics (acenes, thiophene oligomers, etc.), alkali halides and cyanides, LiH, metals

Sawing and Polishing

Video microcopy with digital output, .jpg and .tif images of devices and bugs

Polymer synthesis

PPV, DOOPPV, PPP, PANi, and a wide range of other conjugated, conductive polymers

Chalcogenide glass synthesis

Arsenic sulfide and selenide, ternaries with copper and silver. Germanium arsenic selenide (AMTIR), Germanium antimony telluride.

Laue x0ray orientation of single crystals. Crystal cutting on specific planes.

Consulting for graduate students on a wide range of materials issues

Editing of scientific writing

Absorption and emission spectroscopy

FTIR - 20 wave numbers to 1 micron
CARY - 200 nm to 2.5 microns
Fluorimeter - 350 nm to 1000 nm

Low oxygen glove box with balance; spin coater, thermal evaporation and sputtering for manipulation of air-sensitive materials.

 

For Details contact:

Matt Delong, 329 JFB, 581-7462, 580-7246, delong@physics.utah.edu

Wayne Wingert, 327 JFB, 403-9149, wingert@physics.utah.edu