* = corresponding author

Boehme Publications before 2006 (no U of U affiliation)

26. Christoph Boehme*, Klaus Lips,
The investigation of charge carrier recombination and hopping transport with pulsed electrically detected magnetic resonance techniques
published as book article in the book: "Charge transport in disordered solids with applications in electronics", Wiley Publisher, ISBN: 0-470-09504-0, edited by Sergei Baranovski (2006).


25. C. Boehme*, J. Behrends, K. v. Maydell, M. Schmidt and K. Lips,
Investigation of hopping transport in n-a-Si:H/c-Si solar cells with pulsed electrically detected magnetic resonance
J. Non-Cryst. Solids, 352, 1113 (2006).

24. C. Boehme*, K. Lips,
The ultra–sensitive electrical detection of spin Rabi oscillation at paramagnetic defects
Physica B, 376-377, 930-936 (2006).
also on quant-ph: 0509120 (2005).  

23. C. Boehme*, F. Friedrich, T. Ehara and K. Lips,
Recombination at Silicon dangling bonds
Thin Solid Films,  487, 132– 136 (2005).

22. F. Friedrich, C. Boehme*, K. Lips,
Triplet recombination at Pb centers and its implications for capture cross sections
J. Appl. Phys. 97, 056101 (2005).
21. C. Boehme*, F. Friedrich, K. Lips,

A pulsed EDMR study of charge trapping at Pb centers
Mat. Res. Soc. Symp. Proc. E11.3 (2005).

20. K. Lips, C*. Boehme, T. Ehara,

The impact of the electron spin on charge carrier recombination – the example of amorphous silicon
Journal of Optoelectronics and Advanced Materials7, (1) 13 – 24 (2005).

19. C. Boehme*, K. Lips,
Investigation of electronic transitions in semiconductors with pulsed electrically detected magnetic resonance
Appl. Magnetic Resonance 27, 109-122 (2004). Link

18. C. Boehme*, K. Lips,

The nature of dangling bond recombination in µc-Si:H
J. Non-Cryst. Solids338-340 434 (2004).

17. K. Lips*, C. Boehme,
Recombination in µc-Si:H pin solar cells
J. Non-Cryst. Solids338-340 702 (2004).

16. C. Boehme*, K. Lips,
A pulsed EDMR study of hydrogenated microcrystalline silicon at low temperatures
phys. stat. sol. (c) 1 (5),  1255-1274 (2004).

15. C. Boehme*, K. Lips,
Electrical detection of spin coherence in silicon
Phys. Rev. Lett. 91 (24), 246603 (2003).
Also published in the Virtual Journal of Quantum Information and the Virtual Journal of Nanoscale Science & Technology

14. C. Boehme*, K. Lips,
Theory of the time–domain measurement of spin–dependent recombination with pulsed electrically detected magnetic resonance
Phys. Rev. B,  68 (24),   245105 (2003).

13. K. Lips*, C. Boehme, W. Fuhs,
Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance
IEE Proceedings - Circuits, Devices and Systems - Amorphous and microcrystalline semiconductor devices ,  150 (4), 309 (2003). Link

12. K. Lips*, C. Boehme,
Recombination echoes in disordered silicon
Journal of Material Science: Materials in Electronics  14 (10-12), 635 (2003). Link

11. C. Böhme*, Dynamics of spin-dependent charge carrier recombination
Cuvillier Verlag, Göttingen  (2003). 


10. C. Boehme*, K. Lips,
Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers
Phys. Stat. Sol.(b) 233 (3),  427 (2002).<427::AID-PSSB427>3.0.CO;2-J
also available in arXiv: quant-ph/0208040

9. C. Boehme*, K. Lips,
Light-intensity and temperature dependence of trap-dang bond recombination in hydrogenated microcrystalline silicon
Mat. Res. Soc. Symp. Proc.,  715 (A16.2),  (2002).

8. C. Boehme*, P. Kanschat, K. Lips,
Time domain measurement of spin-dependent recombination in microcrystalline silicon
J. Non.-Cryst. Solids,   299-302  566 (2002).

7. C. Boehme*, G. Lucovsky,
Origins of silicon solar cell passivation by SiNx:H anneal
J. Non.-Cryst. Solids,  299-302,  1157 (2002).

6. C. Boehme*, P. Kanschat, K. Lips,
Time domain measurement of spin-dependent recombination - a novel defect spectroscopy
Nucl. Instr. Meth. B,  186 (1-4),  30 (2001).

5. C. Boehme*, K. Lips,
Time domain measurement of spin-dependent recombination
Appl. Phys. Lett.,  79 (26),  4363 (2001).

4. C. Boehme*, P. Kanschat, K. Lips,
Quantum-beat recombination echoes
Europhys. Lett.,  56 (5),  716 (2001).

3. C. Boehme*, G. Lucovsky,
Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposited silicon nitride
J. Vac. Sci. Technol. A,  19 (5),  2622 (2001).

2. C. Boehme*, G. Lucovsky,
H loss mechanism during anneal of silicon nitride: Chemical dissociation
J. Appl. Phys.,  88 (10),  6055 (2000).

1. C. Boehme*, G. Lucovsky,
Diffusion of hydrogen and deuterium in stack systems of SixNyHz/SixNyDz and crystalline Si
Mat. Res. Soc. Symp. Proc.609,  A26.7.1 (2000).

Principal Investigator: Christoph Boehme, Department of Physics and Astronomy, University of Utah,
115 S 1400 E, Salt Lake City, UT 84112-0830, phone 801.581.6806 fax 801.581.4801,
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