We investigate recombination in
hydrogenated amorphous silicon, and other related silicon morphologies
with pulsed electrically and optically detected magnetic resonance
which gives microscopic information about the type of defects involved
in the recombination. We collaborate on these questions with Klaus
Lips from Helmholtz-Zentrum Berlin fur Materialien und Energie (formerly Hahn- Meitner-Institut). P. C.
Taylor from the Colorado Energy Research Institute, and A.
Madan from M. V. Systems.
Sketch of the band diagram of hydrogenated amorphous silicon. There is a wide range of defect in this disordered materials can cause recombination of excess charge carriers.
Plot of the charges detected after a coherent spin excitation as a function of the excitation length and the applied magnetic field. At about 347.5mT, an oscillation is visible representing the coherent nutation of spins which control charge carrier recombination.
|Our recent results on this topic:
S.-Y. Lee, S.-Y. Paik, D. R. McCamey, J. Hu, F. Zhu, A. Madan, and C. Boehme*
Behrends*, K. Lips and
T. Herring, S.-Y. Lee, D. R. McCamey, P. C. Taylor, K. Lips, J. Hu, F. Zhu, A. Madan, and C. Boehme*
Experimental discrimination of
geminate and non-geminate recombination in a-Si:H
Phys. Rev. B 79, 195205 (2009). http://dx.doi.org/10.1103/PhysRevB.79.195205