Selected Recent Publications

  • N. Zheng, C.C. Williams* and E.G. Mishchenko, “A three-dimensional model of  single electron tunneling between a conductive probe and a localized electronic state in a dielectric,” J. Appl. Phys. 101, 093702 (2007). (also selected for publication in the Virtual Journal of Nanoscale Science and Technology, May 14, 2007).
  • E. Bussmann, N. Zheng and C.C. Williams, “Imaging of Localized Electronic States at a non-conducting Surface by Single Electron Tunneling Force Microscopy” Nano Letters, 6 2577 (2006). (also highlighted in the “Research News” section of Materials Today, December, Volume 9 2006).
  • E. Bussmann, N. Zheng and C.C. Williams, “Imaging of Localized Electronic States at a non-conducting Surface by Single Electron Tunneling Force Microscopy,” Nano Letters 6, 2577 (2006).
  • E. Bussmann and C.C. Williams, “Single Electron Tunneling Force Spectroscopy of an Individual Electronic State in a non-conducting Surface,” Appl. Phys. Lett. 88, 263108 (2006).
  • E. Bussmann, N. Zheng and C.C. Williams, “Single electron manipulation to and from a silicon dioxide surface by electrostatic force microscopy,” Appl. Phys. Lett. 86, 163109 (2005).
  • L. J. Klein and C. C. Williams, “Instability induced tunneling and repeatable charge injection to SiO2 surfaces by Electrostatic Force Microscopy,” J. Appl. Phys. 96, 3328 (2004).
  • E. Bussmann, D.J. Kim, and C.C. Williams, Single electron tunneling to insulator surfaces measured by frequency detection electrostatic force microscopy, Appl. Phys. Lett. 85, 2538 (2004).
  • E. Bussmann and C.C. Williams, “Sub-10 nm lateral spatial resolution in Scanning Capacitance Microscopy achieved with solid platinum probes,” Rev. Sci. Inst. 75, 422 (2004).
  • T. Goodman, E. Bussmann, C.C. Williams, M. Taveras, D. Britt, “Electrostatic Force Microscopy Analysis of Lipid Miscibility in Two-Component Monolayers,”, Langmuir 20, 3684 (2004)
  • L.J. Klein and C.C. Williams, “Single electron tunneling to insulator surfaces detected by electrostatic force,” Appl. Phys. Lett., 81, 4589 (2002). - (*Article was also selected to appear in the Virtual Journal of Nanoscale Science and Technology, December 16, 2002).
  • L. J. Klein and C.C. Williams, “Single electron tunneling detected by electrostatic force,” Appl. Phys. Lett., 79, 1828 (2001). (*article also appeared in Nature’s Physics Portal web site, September 2001).
  • R. Davis and C. C. Williams, “An Optical Dipole Model for Photo-detection in the Near-field,” J. Opt. Soc. Am. A 18, 1543 (2001).
  • V.V. Zavyalov, J.S. McMurray, S.D. Stirling, C.C. Williams and H. Smith, “2D dopant and carrier profiles obtained by Scanning Capacitance Microscopy on an actively biased cross-sectioned MOSFET device,” J. Vac. Sci. Tech. B 18, 549 (2000).
  • V.V. Zavyalov, J.S. McMurray and C.C. Williams, “Noise in Scanning Capacitance Microscopy Measurements, “ J. Vac. Sci. Technol. B 18, 1125 (2000).
  • L.J. Klein, C.C. Williams and J. Kim, “Electron Tunneling Detected by Electrostatic Force,” Appl. Phys. Lett., 77, 3615 (2000).
  • V.V. Zavyalov, J.S. McMurray and C.C. Williams, “A Scanning Capacitance Microscope Methodology for Quantitative Analysis of P-N Junctions,” J. Appl. Phys. 85(11), 7774 (1999).
  • C.C. Williams, “2D dopant profiling by Scanning Capacitance Microscopy,” Annu. Rev. Mater. Sci. 29, 471 (1999). (*Invited)
  • V.V. Zavyalov, J.S. McMurray and C.C. Williams, “Advances in Experimental Technique for Quantitative Two Dimensional Dopant Profiling by Scanning Capacitance Microscopy,” Rev. Sci. Inst., 70 (1), 158 (1999).
  • J.S. McMurray, J. Kim and C.C. Williams, "Direct Comparison of 2-Dimensional Dopant Profiles by Scanning Capacitance Microscopy with TSUPREM4 Process Simulation," J. Vac. Sci. Tech. B. 16(1), 344 (1998).
  • J. Kim, J. S. McMurray, C. C. Williams, and J. Slinkman, “Two Step Dopant Diffusion Study Performed in Two Dimensions by Scanning Capacitance Microscopy and TSUPREM IV,” J. of Appl. Phys., 84(3), 1305 (1998).
  • T. Clarysse, M. Caymax, P. De Wolf, T. Trenkler, W. Vandervorst, J. S. McMurray, J. Kim, C.C. Williams, J.G. Clark and G. Neubauer, "Epitaxial Staircase Structure for the Calibration of Electrical Characterization Techniques," J. Vac. Sci. Tech. B 16 (1), 394 (1998).
  • J.K. Leong, C.C. Williams and J.M. Olson, "Evidence of Internal Fields in Two-variant Ordered GaInP2 by Scanning Capacitance Microscopy and Near-field Scanning Optical Microscopy," Phys. Rev. B 56, 1472 (1997).
  • C.J. Kang, C.K. Kim, J.D. Lera, Y. Kuk, K.M Mang, J.G. Lee, K.S. Suh and C.C. Williams, "Depth dependent carrier density profile by scanning capacitance microscopy, Appl. Phys. Lett. 71, 1546 (1997).
  • J.S. McMurray, J. Kim and C.C. Williams, "Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy," J. Vac. Sci. Tech. B15, 1011 (1997).
  • R. Alvis, C.C. Williams, J. McMurray and J. Kim, "Scanning Capacitance Microscopy:  Emerging Metrology Tool for Quantitative Two-Dimensional Dopant Profiling," Future Fab International, p.345 (1997).
  • C.J. Kang, C.K. Kim, Y. Kuk, K.M. Mang, J.K. Lee, K.S. Suh and C.C. Williams, "Depth dependent carrier density profile by scanning capacitance microscopy,"  Appl. Phys. Lett, 71, 1546 (1997).
  • J-K. Leong, C.C. Williams and J.M. Olson, "Evidence of Internal Fields in Two-variant Ordered GaInP2 by Near-field Scanning Optical Microscopy," Phys. Rev. B, 56, 1472 (1997).
  • J-K. Leong, C.C. Williams, J.M. Olson and S. Froyen, "Evidence for Internal Electric Fields in Two Variant Ordered GaInP Obtained by Scanning Capacitance Microscopy," Appl. Phys. Lett. 69, 4081 (1996).
  • R.C. Davis and C.C. Williams, "Nanometer Scale Absorption Spectroscopy by Near-field Photodetection Optical Microscopy," Appl. Phys. Lett., 69(9) 1179 (1996).
  • J-K. Leong, J. McMurray, C.C. Williams and G.B. Stringfellow, "Spatial Mapping of Ordered and Disordered Domains of GaInP by Near-field Scanning Optical Microscopy and Scanning Capacitance Microscopy," J. Vac. Sci. Technol. B, 14(4) 3113 (1996).
  • R.C. Davis, C.C. Williams and P. Neuzil, "Optical Intensity Mapping on the Nanometer Scale by Near-field Photodetection Optical Microscopy," Optics Letters, 21 447 (1996).
  • Y. Leng, C.C. Williams, L.C. Su and G.B. Stringfellow, "Atomic Ordering of GaInP studied by Kelvin Probe Force Microscopy," Appl. Phys. Lett., 66 1264 (1995).
  • J.K. Leong and C.C. Williams, "Shear force microscopy with capacitance detection for near-field scanning optical microscopy," Appl. Phys. Lett., 66 1432 (1995).
  • R.C. Davis, C.C. Williams and P. Neuzil, "Micromachined submicrometer photodiode for scanning probe microscopy," Appl. Phys. Lett. 66, 2309 (1995).